Name: NTJS3157NT1G
Brand: ON Semiconductor
SKU: NTJS3157NT1G
Price: 0.53000 USD
Availability: InStock

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NTJS3157NT1G

Manufacturer part number:NTJS3157NT1G

Manufacturer:ON Semiconductor

Description:NTJS3157NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTJS3157NT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	45MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	3.2A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.2A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	4mA
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Nominal Vgs	400 mV
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTJS3157NT1G Product Details

NTJS3157NT1G Description

NTJS3157NT1G is a member of the family of N-channel power MOSFETs developed by ON Semiconductor based on the leading trench technology for low RDS (on) extending battery life. Moreover, it is able to provide fast switching for increased circuit efficiency. Due to its specific features, NTJS3157NT1G can be used for DC-DC conversion, low side load switch, and more.