Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NTK3134NT1G

NTK3134NT1G

NTK3134NT1G

ON Semiconductor

NTK3134NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTK3134NT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-723
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 200mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 310mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310mW
Turn On Delay Time 6.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 890mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 16V
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Rise Time 4.8ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 4.8 ns
Turn-Off Delay Time 17.3 ns
Continuous Drain Current (ID) 890mA
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.89A
Drain to Source Breakdown Voltage 20V
Height 550μm
Length 1.25mm
Width 850μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.48000 $0.48
500 $0.4752 $237.6
1000 $0.4704 $470.4
1500 $0.4656 $698.4
2000 $0.4608 $921.6
2500 $0.456 $1140
NTK3134NT1G Product Details

NTK3134NT1G Description


The NTK3134NT1G is a 20 V, 890 mA, Single N?Channel with ESD Protection, SOT?723. The type of the NTK3134NT1G, N-Channel MOSFETs, are metal-oxide-semiconductor field-effect transistors that fall under the field-effect transistors category (FET). The capacitor is used to power MOSFET transistors. An insulated-gate field-effect transistor is another name for this type of transistor (IGFET).


NTK3134NT1G Features



? Low RDS N-Channel Switch (on)

? SC89 footprint is 44% smaller and 38% thinner.

? RDS(on) Rating of 1.5 V at Low Threshold Levels

? Low Logic Level Gate Drive operation

? These devices are RoHS compliant and free of Pb, Halogen, and BFR


NTK3134NT1G Applications



? Logic Level Shift

? Load Switching

? Power Switching

? Interface Switching

? Battery Management for Ultra Small Portable Electronics

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News