NTLGF3402PT1G

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Manufacturer part number:NTLGF3402PT1G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 2.3A 6-DFN

Case Package:SOT-23

Datasheet:NTLGF3402PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	FETKY™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Current Rating	-3.9A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	R-XDSO-C8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.14W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 2.7A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	22ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	2.3A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.14Ohm
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	11A
RoHS Status	RoHS Compliant
Lead Free	Lead Free