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FDN86246

FDN86246

FDN86246

ON Semiconductor

FDN86246 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDN86246 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 261m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 75V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Rise Time 1.1ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.9 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 1.6A
Threshold Voltage 3.4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Nominal Vgs 3.4 V
Feedback Cap-Max (Crss) 5 pF
Height 940μm
Length 1.4mm
Width 2.92mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.40040 $1.2012
6,000 $0.38038 $2.28228
15,000 $0.36608 $5.4912
FDN86246 Product Details

FDN86246 Description


FDN86246 is a 150v N-Channel PowerTrench? MOSFET.  This N-Channel MOSFET FDN86246 is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDN86246 is in the SSOT-3 package with 1.5W power dissipation.



FDN86246 Features


  • Max rDS(on) = 261 mΩ at VGS = 10 V, ID = 1.6 A

  • Max rDS(on) = 359 mΩ at VGS = 6 V, ID = 1.4 A

  • High-Performance Trench Technology for Extremely Low rDS(on)

  • High Power and Current Handling Capability in a Widely Used Surface Mount Package

  • Fast Switching Speed

  • 100% UIL Tested

  • RoHS Compliant



FDN86246 Applications


  • Broadband fixed-line access 

  • Datacom module 

  • Wired networking 

  • Wireless infrastructure

  • Lighting

  • Medical


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