FDN86246 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDN86246 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 23 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
1.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.5W
Turn On Delay Time
4.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
261m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
225pF @ 75V
Current - Continuous Drain (Id) @ 25°C
1.6A Ta
Gate Charge (Qg) (Max) @ Vgs
5nC @ 10V
Rise Time
1.1ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2.9 ns
Turn-Off Delay Time
8 ns
Continuous Drain Current (ID)
1.6A
Threshold Voltage
3.4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
150V
Nominal Vgs
3.4 V
Feedback Cap-Max (Crss)
5 pF
Height
940μm
Length
1.4mm
Width
2.92mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.40040
$1.2012
6,000
$0.38038
$2.28228
15,000
$0.36608
$5.4912
FDN86246 Product Details
FDN86246 Description
FDN86246 is a 150v N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDN86246 is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDN86246 is in the SSOT-3 package with 1.5W power dissipation.
FDN86246 Features
Max rDS(on) = 261 mΩ at VGS = 10 V, ID = 1.6 A
Max rDS(on) = 359 mΩ at VGS = 6 V, ID = 1.4 A
High-Performance Trench Technology for Extremely Low rDS(on)
High Power and Current Handling Capability in a Widely Used Surface Mount Package