SI7448DP-T1-GE3

new-10%

Manufacturer part number:SI7448DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 22A 5.2W 6.5mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI7448DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Power Dissipation-Max	1.9W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.5m Ω @ 22A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	13.4A Ta
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	125 ns
Continuous Drain Current (ID)	22A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	13.4A
Drain-source On Resistance-Max	0.0065Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	50A
Nominal Vgs	600 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant