NTLJS4159NT1G

new-10%

Manufacturer part number:NTLJS4159NT1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 3.6A 6-WFDN

Case Package:SOT-23

Datasheet:NTLJS4159NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Current Rating	7.8A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.92W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1045pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.6A Ta
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Rise Time	12.4ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	12.4 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	3.6A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.045Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	28A
RoHS Status	RoHS Compliant
Lead Free	Lead Free