NTMFS10N3D2C Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

NTMFS10N3D2C Features

Shielded Gate MOSFET Technology

Max rDS(on) = 3.2 m at VGS = 10 V, ID = 67 A

Max rDS(on) = 9 m at VGS = 6 V, ID = 33 A

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

MSL1 Robust Package Design

100% UIL Tested

These Devices are Pb?Free and are RoHS Compliant

NTMFS10N3D2C Applications

Primary DC?DC MOSFET

Synchronous Rectifier in DC?DC and AC?DC

Motor Drive

Solar