NP110N055PUJ-E1B-AY

new-10%

Manufacturer part number:NP110N055PUJ-E1B-AY

Manufacturer:Renesas Electronics America

Description:TRANSISTOR

Case Package:SOT-23

Datasheet:NP110N055PUJ-E1B-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Vendor Undefined
Number of Terminations	2
ECCN Code	EAR99
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-263AB
Drain Current-Max (Abs) (ID)	110A
Drain-source On Resistance-Max	0.0024Ohm
Pulsed Drain Current-Max (IDM)	440A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	435 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	288W
RoHS Status	ROHS3 Compliant