NTMFS4936NCT1G

new-10%

Manufacturer part number:NTMFS4936NCT1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 11.6A SO-8FL

Case Package:SOT-23

Datasheet:NTMFS4936NCT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	38 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
Number of Elements	1
Power Dissipation-Max	920mW Ta 43W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.62W
Case Connection	DRAIN
Turn On Delay Time	10.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3044pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11.6A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	19.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	11.6A
Drain-source On Resistance-Max	0.0048Ohm
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	96.8 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant