NTMFS4941NT3G

new-10%

Manufacturer part number:NTMFS4941NT3G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 9A SO8FL

Case Package:SOT-23

Datasheet:NTMFS4941NT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	5
Number of Elements	1
Power Dissipation-Max	910mW Ta 25.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1650pF @ 15V
Current - Continuous Drain (Id) @ 25°C	9A Ta 47A Tc
Gate Charge (Qg) (Max) @ Vgs	25.5nC @ 10V
Rise Time	22ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.7 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	47A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.009Ohm
Pulsed Drain Current-Max (IDM)	140A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	42 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free