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BUK7575-55,127

BUK7575-55,127

BUK7575-55,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 75m Ω @ 10A, 10V ±16V 500pF @ 25V 55V TO-220-3

SOT-23

BUK7575-55,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ESD PROTECTION
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 61W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19.7A Tc
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 19.7A
Drain-source On Resistance-Max 0.075Ohm
Pulsed Drain Current-Max (IDM) 79A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 30 mJ
Feedback Cap-Max (Crss) 85 pF
Turn Off Time-Max (toff) 45ns
Turn On Time-Max (ton) 35ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.624400 $2.6244
10 $2.475849 $24.75849
100 $2.335707 $233.5707
500 $2.203497 $1101.7485
1000 $2.078771 $2078.771
BUK7575-55,127 Product Details

BUK7575-55,127 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 30 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 500pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 19.7A.There is a peak drain current of 79A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

BUK7575-55,127 Features


the avalanche energy rating (Eas) is 30 mJ
based on its rated peak drain current 79A.
a 55V drain to source voltage (Vdss)


BUK7575-55,127 Applications


There are a lot of NXP USA Inc.
BUK7575-55,127 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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