NTMFS5844NLT1G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 48 mJ.A device's maximal input capacitance is 1460pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 243A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTMFS5844NLT1G Features
the avalanche energy rating (Eas) is 48 mJ
a continuous drain current (ID) of 11.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 243A.
NTMFS5844NLT1G Applications
There are a lot of ON Semiconductor
NTMFS5844NLT1G applications of single MOSFETs transistors.
- Consumer Appliances
-
- Lighting
-
- Uninterruptible Power Supply
-
- AC-DC Power Supply
-
- Synchronous Rectification for ATX 1 Server I Telecom PSU
-
- Motor drives and Uninterruptible Power Supplies
-
- Micro Solar Inverter
-
- DC/DC converters
-
- Power Tools
-
- Motor Drives and Uninterruptible Power Supples
-
