NTMS4176PR2G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NTMS4176PR2G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
8
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
810mW Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.44W
Turn On Delay Time
15 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
18m Ω @ 9.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1720pF @ 24V
Current - Continuous Drain (Id) @ 25°C
5.5A Ta
Gate Charge (Qg) (Max) @ Vgs
17nC @ 4.5V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
19.5 ns
Continuous Drain Current (ID)
-7.3A
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
5.5A
Drain to Source Breakdown Voltage
30V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.182847
$0.182847
10
$0.172497
$1.72497
100
$0.162733
$16.2733
500
$0.153522
$76.761
1000
$0.144832
$144.832
NTMS4176PR2G Product Details
NTMS4176PR2G Description
Power MOSFETNTMS4176PR2G is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.
NTMS4176PR2G Features
?Low RDS(on) to Minimize Conduction Losses
?Low Capacitance to Minimize Driver Losses
?Optimized Gate Charge to Minimize Switching Losses