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NTMS4176PR2G

NTMS4176PR2G

NTMS4176PR2G

ON Semiconductor

NTMS4176PR2G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTMS4176PR2G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 810mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.44W
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 9.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1720pF @ 24V
Current - Continuous Drain (Id) @ 25°C 5.5A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 19.5 ns
Continuous Drain Current (ID) -7.3A
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 5.5A
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.182847 $0.182847
10 $0.172497 $1.72497
100 $0.162733 $16.2733
500 $0.153522 $76.761
1000 $0.144832 $144.832
NTMS4176PR2G Product Details

NTMS4176PR2G  Description


  Power MOSFET  NTMS4176PR2G is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.

 

NTMS4176PR2G   Features


?Low RDS(on) to Minimize Conduction Losses

?Low Capacitance to Minimize Driver Losses

?Optimized Gate Charge to Minimize Switching Losses

?SOIC-8 Surface Mount Package Saves Board Space

?This is a Pb-Free Device

 

NTMS4176PR2G    Applications


?Load Switches

?Notebook PC's

?Desktop PC's


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