Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NTP52N10

NTP52N10

NTP52N10

ON Semiconductor

NTP52N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTP52N10 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn80Pb20)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 52A
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 214W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 95ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 74 ns
Continuous Drain Current (ID) 60A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 156A
Avalanche Energy Rating (Eas) 800 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
NTP52N10 Product Details

IRL2910SPBF Description


The IRL2910SPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package is capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. The IRL2910SPBF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.



IRL2910SPBF Features


  • Logic-Level Gate Drive

  • Surface Mount

  • Advanced Process Technology

  • Ultra Low On-Resistance

  • Dynamic dv/dt Rating

  • Fast Switching

  • Fully Avalanche Rated

  • Lead-Free



IRL2910SPBF Applications


  • Induction furnaces

  • Arc furnaces and arc welders

  • Steel rolling mills

  • Large motors with periodic loading

  • Thyristor drives

  • Railway traction which is mostly through d.c. drives


Related Part Number

SI4654DY-T1-E3
IXTV30N50P
IXTV30N50P
$0 $/piece
IRF9520NS
RSS075P03FU6TB
IRF7494TRPBF
IRFZ34L
IRFZ34L
$0 $/piece
APT70SM70S
DMP1096UCB4-7
IRF1407L
STB100NH02LT4

Get Subscriber

Enter Your Email Address, Get the Latest News