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RJK2057DPA-WS#J0

  • RJK2057DPA-WS#J0
  • RJK2057DPA-WS#J0

RJK2057DPA-WS#J0

RJK2057DPA-WS#J0

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 85m Ω @ 10A, 10V ±30V 1250pF @ 25V 19nC @ 10V 200V 8-PowerWDFN

SOT-23

RJK2057DPA-WS#J0 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RJK2057DPA-WS#J0 Product Details

RJK2057DPA-WS#J0 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1250pF @ 25V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

RJK2057DPA-WS#J0 Features


a 200V drain to source voltage (Vdss)


RJK2057DPA-WS#J0 Applications


There are a lot of Renesas Electronics America
RJK2057DPA-WS#J0 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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