NTP85N03G

new-10%

Manufacturer part number:NTP85N03G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 28V 85A TO-220AB

Case Package:SOT-23

Datasheet:NTP85N03G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	28V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	85A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	80W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	80W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2150pF @ 24V
Current - Continuous Drain (Id) @ 25°C	85A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 4.5V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	85A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	15A
Drain-source On Resistance-Max	0.0068Ohm
Drain to Source Breakdown Voltage	28V
Pulsed Drain Current-Max (IDM)	45A
Avalanche Energy Rating (Eas)	61 mJ
Height	6.35mm
Length	6.35mm
Width	25.4mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free