SI3429EDV-T1-GE3

new-10%

Manufacturer part number:SI3429EDV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CHAN 20V TSOP6S

Case Package:SOT-23

Datasheet:SI3429EDV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	21mOhm
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
JESD-30 Code	R-PDSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	4.2W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4085pF @ 50V
Current - Continuous Drain (Id) @ 25°C	8A Ta 8A Tc
Gate Charge (Qg) (Max) @ Vgs	118nC @ 10V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
JEDEC-95 Code	MO-193AA
Drain Current-Max (Abs) (ID)	8A
DS Breakdown Voltage-Min	20V
RoHS Status	ROHS3 Compliant