NTQS6463R2

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NTQS6463R2

Manufacturer part number:NTQS6463R2

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 6.8A 8-TSSOP

Case Package:SOT-23

Datasheet:NTQS6463R2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn90Pb10)
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	-6.8A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	930mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.39W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 6.8A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	6.8A Ta
Gate Charge (Qg) (Max) @ Vgs	50nC @ 5V
Rise Time	22ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	6.8A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	5.5A
Drain-source On Resistance-Max	0.02Ohm
Drain to Source Breakdown Voltage	-20V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead