STB46NF30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STB46NF30 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STB46N
Configuration
Single
Power Dissipation-Max
300W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
75m Ω @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
90nC @ 10V
Drain to Source Voltage (Vdss)
300V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
42A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STB46NF30 Product Details
STB46NF30 Description
These Power MOSFETs have been developed using the STMicroelectronics'unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switches in advanced high-efficiency isolated DCDC converters for telecom and computer applications and with low gate charge driving requirements.