Name: NTR5103NT1G
Brand: ON Semiconductor
SKU: NTR5103NT1G
Price: 0.22000 USD
Availability: InStock

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NTR5103NT1G

Manufacturer part number:NTR5103NT1G

Manufacturer:ON Semiconductor

Description:NTR5103NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTR5103NT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	300mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	1.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5 Ω @ 240mA, 10V
Vgs(th) (Max) @ Id	2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 25V
Current - Continuous Drain (Id) @ 25°C	260mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.81nC @ 5V
Rise Time	1.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±30V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	4.8 ns
Continuous Drain Current (ID)	260mA
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	0.26A
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Height	1.11mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTR5103NT1G Product Details

NTR5103NT1G MAXIMUM RATINGS

Stresses exceeding those listed in the Maximum Rating table may damage the device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.