NTR5103NT1G

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Manufacturer part number:NTR5103NT1G

Manufacturer:ON Semiconductor

Description:NTR5103NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTR5103NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	300mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	1.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5 Ω @ 240mA, 10V
Vgs(th) (Max) @ Id	2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 25V
Current - Continuous Drain (Id) @ 25°C	260mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.81nC @ 5V
Rise Time	1.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±30V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	4.8 ns
Continuous Drain Current (ID)	260mA
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	0.26A
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Height	1.11mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free