IRF840LCSTRRPBF

new-10%

Manufacturer part number:IRF840LCSTRRPBF

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:IRF840LCSTRRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	S-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	850m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.85Ohm
DS Breakdown Voltage-Min	500V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant