FDB024N04AL7

new-10%

Manufacturer part number:FDB024N04AL7

Manufacturer:ON Semiconductor

Description:MOSFET 40V 2.4MOHM D2PAK-7L PowerTrench MOSFET

Case Package:SOT-23

Datasheet:FDB024N04AL7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins	7
Weight	1.312g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Power Dissipation-Max	214W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	214W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	109nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	71 ns
Continuous Drain Current (ID)	219A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0024Ohm
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	864 mJ
Height	9.4mm
Length	10.8mm
Width	4.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant