NTTFS4941NTAG

new-10%

Manufacturer part number:NTTFS4941NTAG

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 8.3A 8WDFN

Case Package:SOT-23

Datasheet:NTTFS4941NTAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Power Dissipation-Max	840mW Ta 25.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1619pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8.3A Ta 46A Tc
Gate Charge (Qg) (Max) @ Vgs	22.8nC @ 10V
Rise Time	21ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	46A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.009Ohm
DS Breakdown Voltage-Min	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free