BSC110N15NS5ATMA1

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BSC110N15NS5ATMA1

Manufacturer part number:BSC110N15NS5ATMA1

Manufacturer:Infineon Technologies

Description:BSC110N15NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSC110N15NS5ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	PG-TDSON-8-7
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	OptiMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	125W Tc
Power Dissipation	125W
Turn On Delay Time	10.3 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	4.6V @ 91μA
Input Capacitance (Ciss) (Max) @ Vds	2770pF @ 75V
Current - Continuous Drain (Id) @ 25°C	76A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	14.5 ns
Continuous Drain Current (ID)	76A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Max Junction Temperature (Tj)	150°C
Drain to Source Resistance	9mOhm
Height	1.1mm
RoHS Status	ROHS3 Compliant