NTTFS5826NLTWG

new-10%

Manufacturer part number:NTTFS5826NLTWG

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 8A 8-WDFN

Case Package:SOT-23

Datasheet:NTTFS5826NLTWG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Power Dissipation-Max	3.1W Ta 19W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	19W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Ta
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.032Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	133A
Avalanche Energy Rating (Eas)	20 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free