FQA10N80_F109

new-10%

Manufacturer part number:FQA10N80_F109

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 800V 9.8A TO-3P

Case Package:SOT-23

Datasheet:FQA10N80_F109 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	240W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.05Ohm @ 4.9A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.8A Tc
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V