NTTS2P02R2G

new-10%

Manufacturer part number:NTTS2P02R2G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 2.4A 8MICRO

Case Package:SOT-23

Datasheet:NTTS2P02R2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-2.4A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	780mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	780mW
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 16V
Current - Continuous Drain (Id) @ 25°C	2.4A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Rise Time	31ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	2.4A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	-20V
RoHS Status	RoHS Compliant
Lead Free	Lead Free