NVD5802NT4G

new-10%

Manufacturer part number:NVD5802NT4G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 40V 16.4A DPAK

Case Package:SOT-23

Datasheet:NVD5802NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	27 Weeks
Lifecycle Status	LIFETIME (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	2.5W Ta 93.75W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5300pF @ 12V
Current - Continuous Drain (Id) @ 25°C	16.4A Ta 101A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Rise Time	52ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	101A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	16.4A
Drain-source On Resistance-Max	0.0078Ohm
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	240 mJ
Height	2.38mm
Length	6.22mm
Width	6.73mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free