SUD50P04-08-GE3 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5380pF @ 20V.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -50A.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -40V, and this device has a drainage-to-source breakdown voltage of -40VV.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.-1V is the threshold voltage at which an electrical device activates any of its operations.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SUD50P04-08-GE3 Features

a continuous drain current (ID) of -50A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 70 ns
a threshold voltage of -1V
a 40V drain to source voltage (Vdss)

SUD50P04-08-GE3 Applications

There are a lot of Vishay Siliconix SUD50P04-08-GE3 applications of single MOSFETs transistors.

• Telecom 1 Sever Power Supplies
• Server power supplies
• Consumer Appliances
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supples
• Uninterruptible Power Supply
• AC-DC Power Supply
• Power Management Functions
• Industrial Power Supplies
• LCD/LED/ PDP TV Lighting