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NVMFD5C680NLWFT1G

NVMFD5C680NLWFT1G

NVMFD5C680NLWFT1G

ON Semiconductor

Power MOSFET Dual N-Channel 60 V 26 A 28m Ohm 8-Pin DFN T/R

SOT-23

NVMFD5C680NLWFT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 48 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 3W Ta 19W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 28m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 13μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Ta 26A Tc
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $0.41415 $0.41415
3,000 $0.38654 $1.15962
7,500 $0.36721 $2.57047
10,500 $0.35341 $3.5341
NVMFD5C680NLWFT1G Product Details
The ON Semiconductor NVMFD5C680NLWFT1G is a dual N-Channel Power MOSFET array designed for high-power applications. This device features a maximum drain-source voltage of 60V, a maximum drain current of 26A, and a low on-resistance of 28mΩ. It is housed in an 8-pin DFN package and is suitable for use in a wide range of applications, including power management, motor control, and power conversion. The NVMFD5C680NLWFT1G is designed to provide superior performance and reliability in high-power applications. It is RoHS compliant and is backed by ON Semiconductor's industry-leading warranty.

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