SIZ904DT-T1-GE3

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Manufacturer part number:SIZ904DT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 12/16A 20/33W 24/13.5mOhms @ 10V

Case Package:SOT-23

Datasheet:SIZ904DT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-PowerPair™
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	24mOhm
Subcategory	FET General Purpose Power
Max Power Dissipation	33W
Base Part Number	SIZ904
JESD-30 Code	R-PDSO-N6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN SOURCE
Power - Max	20W 33W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A 16A
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	9ns
Fall Time (Typ)	8 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	30A
Avalanche Energy Rating (Eas)	5 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	6mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free