NVMFS4841NT1G

new-10%

Manufacturer part number:NVMFS4841NT1G

Manufacturer:ON Semiconductor

Description:MOSFET Single N-Channel 30V,89A,7mOhm

Case Package:SOT-23

Datasheet:NVMFS4841NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	LIFETIME (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	5
Number of Elements	1
Power Dissipation-Max	3.7W Ta 112W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	112W
Case Connection	DRAIN
Turn On Delay Time	13.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1436pF @ 12V
Current - Continuous Drain (Id) @ 25°C	16A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	66.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7.5 ns
Turn-Off Delay Time	15.5 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	89A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	336A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free