NVMFS4C302NWFT1G

new-10%

Manufacturer part number:NVMFS4C302NWFT1G

Manufacturer:ON Semiconductor

Description:NFET SO8FL 30V 1.15MO

Case Package:SOT-23

Datasheet:NVMFS4C302NWFT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1
Number of Terminations	5
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.75W Ta 115W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5780pF @ 15V
Current - Continuous Drain (Id) @ 25°C	43A Ta 241A Tc
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	43A
Drain-source On Resistance-Max	0.0017Ohm
Pulsed Drain Current-Max (IDM)	900A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	186 mJ