NVMFS5A160PLZWFT1G

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Manufacturer part number:NVMFS5A160PLZWFT1G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 7.7m Ω @ 50A, 10V ±20V 7700pF @ 20V 160nC @ 10V 60V 8-PowerTDFN, 5 Leads

Case Package:SOT-23

Datasheet:NVMFS5A160PLZWFT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	41 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Published	2015
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	10
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	3.8W Ta 200W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.8W
Case Connection	DRAIN
Turn On Delay Time	50 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	7.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	7700pF @ 20V
Current - Continuous Drain (Id) @ 25°C	15A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	645 ns
Continuous Drain Current (ID)	-15A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	335 mJ
Max Junction Temperature (Tj)	175°C
Height	1.1mm
RoHS Status	ROHS3 Compliant