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FQP3N50C-F080

FQP3N50C-F080

FQP3N50C-F080

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tube 2.5 Ω @ 1.5A, 10V ±30V 365pF @ 25V 13nC @ 10V 500V TO-220-3

SOT-23

FQP3N50C-F080 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 62W Tc
Element Configuration Single
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.42000 $1.42
10 $1.26000 $12.6
100 $0.99610 $99.61
500 $0.77246 $386.23
FQP3N50C-F080 Product Details

FQP3N50C-F080 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 365pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

FQP3N50C-F080 Features


a continuous drain current (ID) of 3A
the turn-off delay time is 35 ns
a 500V drain to source voltage (Vdss)


FQP3N50C-F080 Applications


There are a lot of ON Semiconductor
FQP3N50C-F080 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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