NVMFS5C404NLAFT1G Description

The NVMFS5C404NLAFT1G is a MOSFET – Power, Single N-Channel 40 V, 0.67 m, 370 A. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.

NVMFS5C404NLAFT1G Features

• NVMFS5C404NLWF ? Wettable Flank Option for Enhanced Optical Inspection

• AEC?Q101 Qualified and PPAP Capable

• These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

NVMFS5C404NLAFT1G Applications

• Switch Mode Power Supplies (SMPS)

• Residential, commercial, architectural and street lighting

• DC-DC converters

• Motor control

• Automotive applications