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R6004KNX

R6004KNX

R6004KNX

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel Bulk 980m Ω @ 1.5A, 10V ±20V 280pF @ 25V 10.2nC @ 10V 600V TO-220-3 Full Pack

SOT-23

R6004KNX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 980m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 10.2nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.98Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 46 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.528621 $1.528621
10 $1.442096 $14.42096
100 $1.360467 $136.0467
500 $1.283460 $641.73
1000 $1.210811 $1210.811
R6004KNX Product Details

R6004KNX Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 46 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 280pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [4A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 12A.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

R6004KNX Features


the avalanche energy rating (Eas) is 46 mJ
based on its rated peak drain current 12A.
a 600V drain to source voltage (Vdss)


R6004KNX Applications


There are a lot of ROHM Semiconductor
R6004KNX applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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