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NVMFS5C404NWFAFT1G

NVMFS5C404NWFAFT1G

NVMFS5C404NWFAFT1G

ON Semiconductor

NVMFS5C404NWFAFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NVMFS5C404NWFAFT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Power Dissipation-Max 3.9W Ta 200W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 53A Ta 378A Tc
Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $1.73250 $1.7325
NVMFS5C404NWFAFT1G Product Details

NVMFS5C404NWFAFT1G Description


Fairchild Semiconductor's PowerTrench? process, which includes Shielded Gate technology, was used to create these N-Channel logic Level MOSFETs. The on-state resistance of this approach has been enhanced while maintaining great switching performance. To improve the ESD voltage level, a G-S zener was installed.



NVMFS5C404NWFAFT1G Features


? Compact Design with a Small Footprint (5x6 mm)


? Reduced RDS(on) to Reduce Conduction Losses


? Minimize Driver Losses with Low QG and Capacitance


? Wettable Flank Option for Enhanced Optical Inspection NVMFS5C404NWF


? PPAP Capable and AECQ101 Qualified


? These devices are RoHS compliant and free of lead.



NVMFS5C404NWFAFT1G Applications


Switching applications


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