NVMFS5C404NWFAFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NVMFS5C404NWFAFT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Power Dissipation-Max
3.9W Ta 200W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
0.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
8400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
53A Ta 378A Tc
Gate Charge (Qg) (Max) @ Vgs
128nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NVMFS5C404NWFAFT1G Product Details
NVMFS5C404NWFAFT1G Description
Fairchild Semiconductor's PowerTrench? process, which includes Shielded Gate technology, was used to create these N-Channel logic Level MOSFETs. The on-state resistance of this approach has been enhanced while maintaining great switching performance. To improve the ESD voltage level, a G-S zener was installed.
NVMFS5C404NWFAFT1G Features
? Compact Design with a Small Footprint (5x6 mm)
? Reduced RDS(on) to Reduce Conduction Losses
? Minimize Driver Losses with Low QG and Capacitance
? Wettable Flank Option for Enhanced Optical Inspection NVMFS5C404NWF
? PPAP Capable and AECQ101 Qualified
? These devices are RoHS compliant and free of lead.