NVMFS5C410NLAFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NVMFS5C410NLAFT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 hours ago)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Power Dissipation-Max
3.8W Ta 167W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
0.82m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
8862pF @ 25V
Current - Continuous Drain (Id) @ 25°C
50A Ta 330A Tc
Gate Charge (Qg) (Max) @ Vgs
143nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NVMFS5C410NLAFT1G Product Details
NVMFS5C410NLAFT1G Description
NVMFS5C410NLAFT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor. It is able to minimize conduction losses based on low RDS (on) and minimize driver losses based on low QG and capacitance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including switching applications, synchronous rectification, and uninterruptible power supplies.