NVMFS5C410NLWFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NVMFS5C410NLWFT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
38 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 3 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Configuration
Single
Power Dissipation-Max
3.8W Ta 167W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
0.9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
8862pF @ 25V
Current - Continuous Drain (Id) @ 25°C
48A Ta 315A Tc
Gate Charge (Qg) (Max) @ Vgs
143nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
315A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NVMFS5C410NLWFT1G Product Details
NVMFS5C410NLWFT1G Description
NVMFS5C410NLWFT1G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 40V. The operating temperature of the NVMFS5C410NLWFT1G is -55°C~175°C TJ and its maximum power dissipation is 167W Tc. NVMFS5C410NLWFT1G has 8 pins and it is available in Tape&Reel packaging way.
NVMFS5C410NLWFT1G Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C410NLWF ? Wettable Flank Option for Enhanced Optical Inspection
AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant