NVMFS6B25NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NVMFS6B25NLT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
42 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
3.6W Ta 62W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
24m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
905pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Ta 33A Ta
Gate Charge (Qg) (Max) @ Vgs
13.5nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
RoHS Status
ROHS3 Compliant
NVMFS6B25NLT1G Product Details
NVMFS6B25NLT1G Description
NVMFS6B25NLT1G is a 100v Single N?Channel Power MOSFET. A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET NVMFS6B25NLT1G is in the SO-8FL package with 3.6W power dissipation.
NVMFS6B25NLT1G Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS6B25NLWF ? Wettable Flank Option for Enhanced Optical Inspection