TK12A60U(Q,M)

new-10%

Manufacturer part number:TK12A60U(Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 600V 12A TO220SIS

Case Package:SOT-23

Datasheet:TK12A60U(Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Supplier Device Package	TO-220SIS
Operating Temperature	150°C TJ
Packaging	Tube
Published	2009
Series	DTMOSII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	35W Tc
Element Configuration	Single
Power Dissipation	35W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	720pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	30ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Input Capacitance	720pF
Drain to Source Resistance	400mOhm
Rds On Max	400 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant