NVMFS6H824NWFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NVMFS6H824NWFT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
3.8W Ta 115W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 140μA
Input Capacitance (Ciss) (Max) @ Vds
2470pF @ 40V
Current - Continuous Drain (Id) @ 25°C
19A Ta 103A Tc
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Drain to Source Voltage (Vdss)
80V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.89000
$0.89
500
$0.8811
$440.55
1000
$0.8722
$872.2
1500
$0.8633
$1294.95
2000
$0.8544
$1708.8
2500
$0.8455
$2113.75
NVMFS6H824NWFT1G Product Details
NVMFS6H824NWFT1G Description
NVMFS6H824NWFT1G is an 80V single N-channel power MOSFET. NVMFS6H824NWFT1G onsemi Single N-Channel Power MOSFET is a small footprint and compact design MOSFET with low RDS(on) and low capacitance. The low RDS(on) value helps to minimize conduction losses and low capacitance minimizes driver losses. These single N-channel power MOSFETs are Pb-free and RoHS compliant and feature -55°C to 175°C operating temperature range.
NVMFS6H824NWFT1G Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS6H824NWF − Wettable Flank Option for Enhanced Optical Inspection