NVMTS1D2N08H datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NVMTS1D2N08H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
33 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
5W Ta 300W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.1m Ω @ 90A, 10V
Vgs(th) (Max) @ Id
4V @ 590μA
Input Capacitance (Ciss) (Max) @ Vds
10100pF @ 40V
Current - Continuous Drain (Id) @ 25°C
43.5A Ta 337A Tc
Gate Charge (Qg) (Max) @ Vgs
147nC @ 10V
Drain to Source Voltage (Vdss)
80V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.41000
$6.41
500
$6.3459
$3172.95
1000
$6.2818
$6281.8
1500
$6.2177
$9326.55
2000
$6.1536
$12307.2
2500
$6.0895
$15223.75
NVMTS1D2N08H Product Details
NVMTS1D2N08H Description
NVMTS1D2N08H is an 80V Single N-Channel Power MOSFET. The onsemi NVMTS1D2N08H can be applied in Switching Power Supply, Power switches (High Side Driver, Low Side Driver, H-Bridges, etc.), and 48V Systems due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NVMTS1D2N08H is in the DFNW-8 package with 300W power dissipation.
NVMTS1D2N08H Features
Small Footprint (8x8 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
AEC?Q101 Qualified and PPAP Capable
Pb?Free and are RoHS Compliant
NVMTS1D2N08H Applications
Switching Power Supply
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)