IXFL32N120P

new-10%

Manufacturer part number:IXFL32N120P

Manufacturer:IXYS

Description:MOSFET N-CH 1200V 24A I5-PAK

Case Package:SOT-23

Datasheet:IXFL32N120P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUSi5-Pak™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	HiPerFET™, PolarP2™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	520W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	520W
Case Connection	ISOLATED
Turn On Delay Time	70 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	340m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	21000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	360nC @ 10V
Rise Time	62ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	51 ns
Turn-Off Delay Time	88 ns
Continuous Drain Current (ID)	24A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1.2kV
Pulsed Drain Current-Max (IDM)	100A
Avalanche Energy Rating (Eas)	2000 mJ
Height	26.42mm
Length	20.29mm
Width	5.21mm
RoHS Status	ROHS3 Compliant