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NVTFS4C05NWFTAG

NVTFS4C05NWFTAG

NVTFS4C05NWFTAG

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.6m Ω @ 30A, 10V ±20V 1988pF @ 15V 31nC @ 10V 30V 8-PowerWDFN

SOT-23

NVTFS4C05NWFTAG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 4 hours ago)
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.2W Ta 68W Tc
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1988pF @ 15V
Current - Continuous Drain (Id) @ 25°C 22A Ta 102A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 102A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0051Ohm
Pulsed Drain Current-Max (IDM) 433A
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $0.46299 $0.46299
3,000 $0.43212 $1.29636
7,500 $0.41052 $2.87364
10,500 $0.39508 $3.9508
NVTFS4C05NWFTAG Product Details

NVTFS4C05NWFTAG Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1988pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 102A.22A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 433A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

NVTFS4C05NWFTAG Features


a continuous drain current (ID) of 102A
based on its rated peak drain current 433A.
a 30V drain to source voltage (Vdss)


NVTFS4C05NWFTAG Applications


There are a lot of ON Semiconductor
NVTFS4C05NWFTAG applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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