CSD16301Q2

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CSD16301Q2

Manufacturer part number:CSD16301Q2

Manufacturer:Texas Instruments

Description:CSD16301Q2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD16301Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD16301
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.3W
Case Connection	DRAIN
Turn On Delay Time	2.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 4A, 8V
Vgs(th) (Max) @ Id	1.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	2.8nC @ 4.5V
Rise Time	4.4ns
Drive Voltage (Max Rds On,Min Rds On)	3V 8V
Vgs (Max)	+10V, -8V
Fall Time (Typ)	1.7 ns
Turn-Off Delay Time	4.1 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	5A
Drain-source On Resistance-Max	0.034Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	20A
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.2 V
Height	800μm
Length	2mm
Width	2mm
Thickness	750μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free