NZT6717 Overview
In this device, the DC current gain is 50 @ 250mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 10mA, 250mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 1.2A volts is possible.
NZT6717 Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.2A
NZT6717 Applications
There are a lot of ON Semiconductor NZT6717 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
