2SD1664T100Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 3V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.There is a transition frequency of 150MHz in the part.An input voltage of 32V volts is the breakdown voltage.The maximum collector current is 1A volts.
2SD1664T100Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SD1664T100Q Applications
There are a lot of ROHM Semiconductor 2SD1664T100Q applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
