P2N2222AZL1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.300MHz is present in the transition frequency.A maximum collector current of 600mA volts can be achieved.
P2N2222AZL1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
P2N2222AZL1G Applications
There are a lot of ON Semiconductor P2N2222AZL1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
